UNR221E00L
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
100 MA
Product Status:
Obsolete
Transistor Type:
NPN - Pre-Biased
Frequency - Transition:
150 MHz
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Supplier Device Package:
Mini3-G1
Resistor - Base (R1):
47 KOhms
Mfr:
Panasonic Electronic Components
Resistor - Emitter Base (R2):
22 KOhms
Current - Collector Cutoff (Max):
500nA
Power - Max:
200 MW
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 5mA, 10V
Base Product Number:
UNR221
Introduction
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 200 mW Surface Mount Mini3-G1
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DRA9124X0L |
TRANS PREBIAS PNP 125MW SSMINI3
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UNR9117J0L |
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UNR52ANG0L |
TRANS PREBIAS NPN 150MW SMINI3
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UNR511000L |
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UNR9211G0L |
TRANS PREBIAS NPN 125MW SSMINI3
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DRC2143T0L |
TRANS PREBIAS NPN 200MW MINI3
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|
UNR521900L |
TRANS PREBIAS NPN 150MW SMINI3
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DRC2124E0L |
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UNR5118G0L |
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