IGN1011L1200
manufacturer:
Integra Technologies Inc.
Description:
GAN, RF POWER TRANSISTOR, L-BAND
Category:
Discrete Semiconductor Products
In-stock:
In Stock
Payment Method:
L/C, D/A, D/P, T/T, Western Union,
Shipping Method:
LCL, AIR, FCL, Express
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
RF FETs, MOSFETs
Product Status:
Active
Voltage - Rated:
180 V
Package:
Tray
Series:
-
Noise Figure:
-
Supplier Device Package:
PL84A1
Voltage - Test:
50 V
Mfr:
Integra Technologies Inc.
Frequency:
1.03GHz ~ 1.09GHz
Gain:
16.8dB
Package / Case:
PL84A1
Current - Test:
160 MA
Power - Output:
1250W
Technology:
HEMT
Current Rating (Amps):
-
Base Product Number:
IGN1011
Introduction
RF Mosfet 50 V 160 mA 1.03GHz ~ 1.09GHz 16.8dB 1250W PL84A1
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IGN0912LM500 |
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IGN1214L500B |
GAN, RF POWER TRANSISTOR, L-BAND
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IGN1214M300 |
GAN, RF POWER TRANSISTOR, L-BAND
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IGN2729M400R2 |
GAN, RF POWER TRANSISTOR, S-BAND
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IGT2731M130 |
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In Stock
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