IGN1011L70
manufacturer:
Integra Technologies Inc.
Description:
GAN, RF POWER TRANSISTOR, L-BAND
Category:
Discrete Semiconductor Products
In-stock:
In Stock
Payment Method:
L/C, D/A, D/P, T/T, Western Union,
Shipping Method:
LCL, AIR, FCL, Express
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
RF FETs, MOSFETs
Product Status:
Active
Mounting Type:
Chassis Mount
Voltage - Rated:
120 V
Package:
Bulk
Series:
-
Noise Figure:
-
Supplier Device Package:
PL32A2
Voltage - Test:
50 V
Mfr:
Integra Technologies Inc.
Frequency:
1.03GHz ~ 1.09GHz
Gain:
22dB
Package / Case:
PL32A2
Current - Test:
22 MA
Power - Output:
80W
Technology:
GaN HEMT
Current Rating (Amps):
-
Introduction
RF Mosfet 50 V 22 mA 1.03GHz ~ 1.09GHz 22dB 80W PL32A2
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| Image | Part # | Description | |
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IGN0912LM500 |
GAN, RF POWER TRANSISTOR, L-BAND
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IGN1011L1200 |
GAN, RF POWER TRANSISTOR, L-BAND
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IGN1214L500B |
GAN, RF POWER TRANSISTOR, L-BAND
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|
IGN1214M300 |
GAN, RF POWER TRANSISTOR, L-BAND
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|
IGN2729M400R2 |
GAN, RF POWER TRANSISTOR, S-BAND
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IGT2731M130 |
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